IDDQ Test: Will It Survive the DSM Challenge?
نویسندگان
چکیده
As transistor geometries are reduced, leakage current increases. Due to increased levels and process variation, IDDQ test faces difficult challenges for deep sub-micron technologies. Several solutions have been proposed in the literature. This paper provides an overview of some of the solutions. Some views on the future of IDDQ testing are also presented.
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ورودعنوان ژورنال:
- IEEE Design & Test of Computers
دوره 19 شماره
صفحات -
تاریخ انتشار 2002